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SMAJ8.0A 数据表(PDF) 3 Page - Galaxy Semi-Conductor Holdings Limited |
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SMAJ8.0A 数据表(HTML) 3 Page - Galaxy Semi-Conductor Holdings Limited |
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3 / 4 page  U ni B i Min SMAJ33 CL YL 36.7 59.0 SMA J33A CM Y M 36.7 53.3 SMAJ36 CN YN 40.0 64.3 SMA J36A CP Y P 40.0 58.1 SMAJ40 CQ YQ 44.4 71.4 SMA J40A CR Y R 44.4 64.5 SMAJ43 CS YS 47.8 76.7 SMA J43A CT Y T 47.8 69.4 SMAJ45 CU YU 50.0 80.3 SMA J45A CV Y V 50.0 72.7 SMAJ48 CW YW 53.3 85.5 SMA J48A CX Y X 53.3 77.4 SMAJ51 CY YY 56.7 91.1 SMA J51A CZ Y Z 56.7 82.4 SMA J54 RD ZD 60.0 96.3 SMA J54A RE ZE 60.0 87.1 SMA J58 RF ZF 64.4 103 SMA J58A RG ZG 64.4 93.6 SMA J60 RH ZH 66.7 107 SMA J60A RK ZK 66.7 96.8 SMA J64 RL ZL 71.1 114 SMA J64A RM ZM 71.1 103 SMA J70 RN ZN 77.8 125 SMA J70A RP ZP 77.8 113 SMA J75 RQ ZQ 83.3 134 SMA J75A RR ZR 83.3 121 SMA J78 RS ZS 86.7 139 SMA J78A RT ZT 86.7 126 SMA J85 RU ZU 94.4 151 SMA J85ARV ZV94.4 137 SMA J90 RW ZW 100 160 SMA J90A RX ZX 100 146 SMA J100 RY ZY 111 179 SMA J100A RZ ZZ 111 162 SMA J110 S D V D 122 196 SMA J110A SE V E 122 177 SMA J120 SF V F 133 214 SMA J120A S G VG 133 193 SMA J130 SH V H 144 231 SMA J130A S K VK 144 209 SMA J150 SL V L 167 268 SMA J150A S M VM 167 243 SMA J160 SN V N 178 287 SMA J160A SP V P 178 259 SMA J170 SQ V Q 189 304 SMA J170A SR V R 189 275 SMA J188 ST V T 209 344 SMA J188A SS V S 209 328 Max imum reverse leakage at V WM I D( A)(3) Max imum peak pulss surge current I PP M (A )(2) 1.6 104 2.2 1.9 5.0 2.1 136 1.0 78.6 92.1 120 5.0 115 95.8 106 95.1 86.0 100 81.5 86.9 66.3 69.3 73.3 62.7 3.9 3.3 55.3 58.9 5.0 1.0 45 5.1 5.6 4.7 3.7 5.2 4.2 4.7 3.9 4.3 2.4 2.0 2.9 2.4 2.7 2.2 4.1 3.5 5.0 1.7 40 5.0 5.0 5.0 43 43 45 51 5.0 33 36 36 40 5.0 5.0 5.0 5.0 5.0 1.0 70 1.0 1.0 1.0 1.0 1.0 64 58 48 1.0 1.0 1.0 1.0 1.0 1.0 40.6 48.9 44.2 54.3 49.1 65.1 58.4 52.8 61.1 5.0 44.9 1.0 33 5.0 5.0 122 1.0 1.0 1.0 1.0 90 48 85 102 1.0 75 5.0 5.0 78.7 1.0 3.6 1.0 54 5.0 3.1 1.0 51 54 5.0 3.4 1.0 78 5.0 1.0 5.0 58 5.0 5.0 2.9 3.2 2.8 1.0 60 5.0 90 5.0 1.0 64 5.0 5.0 5.0 85 2.6 73.7 1.0 1.0 70 75 5.0 5.0 5.0 5.0 3.1 78 5.0 2.5 2.2 1.5 123 1.0 100 5.0 149 1.0 110 5.0 1.9 1.7 163 1.0 120 5.0 1.4 135 1.0 110 5.0 5.0 1.0 1.0 71.2 1.0 147 1.0 111 1.0 60 5.0 1.3 159 1.0 130 5.0 1.4 176 1.0 130 5.0 1.1 185 1.0 150 5.0 1.2 204 1.0 150 5.0 1.0 197 1.0 160 5.0 1.2 218 1.0 160 0.9 0.99 209 1.0 170 5.0 1.09 231 1.0 170 255 1.0 188 5.0 (4) A ll terms and symbols are consistent w ith A NSI/IEEE C62.35 0.91 Notes: (1) Puls e test :t P 50ms (2) Surge current w avef orm per Fig.3 and derate per Fig.2 (3) For bi-direc tional types having V WM of 10 V olts and les s ,the ID Iimit is doubled 231 1.0 188 5.0 ELECTRICAL CHARACTERISTICS R atings at 25 am bient tem perature unles s otherwise s pec if ied.VF=3.5V at IF=25A (uni-directional only ) Breakdow n v oltage V (B R) at IT (1) (V ) Max Max imum clamping v oltage at I PP M Vc (V) Dev ice type Device marking code Test current I T(m A ) Stand-of f v oltage V WM (V ) BLGALAXYELECTRICAL Document Number 0285005 3. www.galaxycn.com |
类似零件编号 - SMAJ8.0A |
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类似说明 - SMAJ8.0A |
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