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L6204 数据表(PDF) 4 Page - STMicroelectronics |
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L6204 数据表(HTML) 4 Page - STMicroelectronics |
4 / 10 page CIRCUIT DESCRIPTION L6204 is a dual full bridge IC designed to drive DC motors, stepper motors and other inductive loads. Each bridge has 4 power DMOS transistor with RDSon = 1.2 Ω and the relative protection and control circuitry. (see fig. 3) The 4 half bridges can be controlled independently by means of the 4 inputs IN!, IN2, IN3, IN4 and 2 enable inputs ENABLE1 and ENABLE2. External connections are provided so that sensing resistors can be added for constant current chop- per applications. LOGIC DRIVE (*) INPUTS OUTPUT MOSFETS EN1=EN2=H IN1 IN3 IN2 IN4 L L H H L H L H Sink 1, Sink 2 Sink 1, Source 2 Source 1, Sink 2 Source 1, Source 2 EN1=EN2=L X X All transistor turned OFF L = Low H = High X = Don’t care (*) True table for the two full bridges CROSS CONDUCTION Although the device guarantees the absence of cross-conduction, the presence of the intrinsic di- odes in the POWER DMOS structure causes the generation of current spikes on the sensing termi- nals. This is due to charge-discharge phenomena in the capacitors C1 & C2 associated with the drain source junctions (fig. 1). When the output switches from high to low, a current spike is gen- erated associated with the capacitor C1. On the low-to-high transition a spike of the same polarity is generated by C2, preceded by a spike of the opposite polarity due to the charging of the input capacity of the lower POWER DMOS transistor (see fig. 2). TRANSISTOR OPERATION ON STATE When one of the POWER DMOS transistors is ON it can be considered as a resistor RDS(ON) = 1.2 Ω at a junction temperature of 25 °C. In this condition the dissipated power is given by : PON =RDS(ON) ⋅ IDS2 The low RDS(ON) of the Multipower-BCD process can provide high currents with low power dissipa- tion. OFF STATE When one of the POWER DMOS transistor is OFF the VDS voltage is equal to the supply volt- age and only the leakage current IDSS flows. The power dissipation during this period is given by : POFF =VS ⋅ IDSS TRANSITIONS Like all MOS power transistors the DMOS POWER transistors have as intrinsic diode be- tween their source and drain that can operate as a fast freewheeling diode in switched mode appli- cations. During recirculation with the ENABLE in- put high, the voltage drop across the transistor is RDS(ON) . ID and when the voltage reaches the di- ode voltage it is clamped to its characteristic. When the ENABLE input is low, the POWER MOS is OFF and the diode carries all of the recir- culation current. The power dissipated in the tran- sitional times in the cycle depends upon the volt- age and current waveforms in the application. Ptrans. =IDS(t) ⋅ VDS(t) BOOTSTRAP CAPACITORS To ensure the correct driving of high side drivers Figure 2: Current Typical Spikes on the Sensing Pin Figure 1: Intrinsic Structures in the POWER MOS Transistors L6204 4/10 |
类似零件编号 - L6204 |
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类似说明 - L6204 |
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