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L6204 数据表(PDF) 4 Page - STMicroelectronics

部件名 L6204
功能描述  DMOS DUAL FULL BRIDGE DRIVER
Download  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L6204 数据表(HTML) 4 Page - STMicroelectronics

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CIRCUIT DESCRIPTION
L6204 is a dual full bridge IC designed to drive
DC motors, stepper motors and other inductive
loads. Each bridge has 4 power DMOS transistor
with RDSon = 1.2
Ω and the relative protection and
control circuitry. (see fig. 3)
The 4 half bridges can be controlled independently
by means of the 4 inputs IN!, IN2, IN3, IN4 and 2
enable inputs ENABLE1 and ENABLE2.
External connections are provided so that sensing
resistors can be added for constant current chop-
per applications.
LOGIC DRIVE (*)
INPUTS
OUTPUT MOSFETS
EN1=EN2=H
IN1
IN3
IN2
IN4
L
L
H
H
L
H
L
H
Sink 1, Sink 2
Sink 1, Source 2
Source 1, Sink 2
Source 1, Source 2
EN1=EN2=L
X
X
All transistor turned
OFF
L = Low
H = High
X = Don’t care
(*) True table for the two full bridges
CROSS CONDUCTION
Although the device guarantees the absence of
cross-conduction, the presence of the intrinsic di-
odes in the POWER DMOS structure causes the
generation of current spikes on the sensing termi-
nals. This is due to charge-discharge phenomena
in the capacitors C1 & C2 associated with the
drain source junctions (fig. 1). When the output
switches from high to low, a current spike is gen-
erated associated with the capacitor C1. On the
low-to-high transition a spike of the same polarity
is generated by C2, preceded by a spike of the
opposite polarity due to the charging of the input
capacity of the lower POWER DMOS transistor
(see fig. 2).
TRANSISTOR OPERATION
ON STATE
When one of the POWER DMOS transistors is ON
it can be considered as a resistor RDS(ON) = 1.2
Ω at
a junction temperature of 25
°C.
In this condition the dissipated power is given by :
PON =RDS(ON)
⋅ IDS2
The low RDS(ON) of the Multipower-BCD process
can provide high currents with low power dissipa-
tion.
OFF STATE
When one of the POWER DMOS transistor is
OFF the VDS voltage is equal to the supply volt-
age and only the leakage current IDSS flows. The
power dissipation during this period is given by :
POFF =VS
⋅ IDSS
TRANSITIONS
Like all MOS power transistors the DMOS
POWER transistors have as intrinsic diode be-
tween their source and drain that can operate as
a fast freewheeling diode in switched mode appli-
cations. During recirculation with the ENABLE in-
put high, the voltage drop across the transistor is
RDS(ON)
. ID and when the voltage reaches the di-
ode voltage it is clamped to its characteristic.
When the ENABLE input is low, the POWER
MOS is OFF and the diode carries all of the recir-
culation current. The power dissipated in the tran-
sitional times in the cycle depends upon the volt-
age and current waveforms in the application.
Ptrans. =IDS(t)
⋅ VDS(t)
BOOTSTRAP CAPACITORS
To ensure the correct driving of high side drivers
Figure 2: Current Typical Spikes on the Sensing Pin
Figure 1: Intrinsic Structures in the POWER
MOS Transistors
L6204
4/10


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