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OP193ES 数据表(PDF) 2 Page - Analog Devices |
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OP193ES 数据表(HTML) 2 Page - Analog Devices |
2 / 16 page REV. B –2– OP193/OP293/OP493–SPECIFICATIONS ELECTRICAL SPECIFICATIONS (@ V S = 15.0 V, TA = 25 C unless otherwise noted) “E” Grade “F” Grade Parameter Symbol Conditions Min Typ Max Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS OP193 75 150 µV OP193, –40 °C ≤ TA ≤ +125°C 175 250 µV OP293 100 250 µV OP293, –40 °C ≤ TA ≤ +125°C 200 350 µV OP493 125 275 µV OP493, –40 °C ≤ TA ≤ +125°C 225 375 µV Input Bias Current IB VCM = 0 V, –40 °C ≤ TA ≤ +125°C15 20 nA Input Offset Current IOS VCM = 0 V, –40 °C ≤ TA ≤ +125°C2 4 nA Input Voltage Range VCM –14.9 +13.5 –14.9 +13.5 V Common-Mode Rejection CMRR –14.9 ≤ VCM ≤ +14 V 100 116 97 116 dB –14.9 ≤ V CM ≤ +14 V, –40 °C ≤ TA ≤ +125°C 9794dB Large Signal Voltage Gain AVO RL = 100 k Ω, –10 V ≤ VOUT ≤ +10 V 500 500 V/mV –40 °C ≤ T A ≤ +85°C 300 300 V/mV –40 °C ≤ TA ≤ +125°C 300 300 V/mV Large Signal Voltage Gain AVO RL = 10 k Ω, –10 V ≤ VOUT ≤ +10 V 350 350 V/mV –40 °C ≤ T A ≤ +85°C 200 200 V/mV –40 °C ≤ TA ≤ +125°C 150 150 V/mV Large Signal Voltage Gain AVO RL = 2 k Ω, –10 V ≤ VOUT ≤ +10 V 200 200 V/mV –40 °C ≤ T A ≤ +85°C 125 125 V/mV –40 °C ≤ T A ≤ +125°C 100 100 V/mV Long Term Offset Voltage VOS Note 1 150 300 µV Offset Voltage Drift ∆V OS/ ∆T Note 2 0.2 1.75 µV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High VOH IL = 1 mA 14.1 14.2 14.1 14.2 V IL = 1 mA, –40 °C ≤ T A ≤ +125°C 14.0 14.0 V IL = 5 mA 13.9 14.1 13.9 14.1 V Output Voltage Swing Low VOL IL = –1 mA –14.7 –14.6 –14.7 –14.6 V IL = –1 mA, –40 °C ≤ T A ≤ +125°C –14.4 –14.4 V IL = –5 mA +14.2 –14.1 +14.2 –14.1 V Short Circuit Current ISC ±25 ±25 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ± 1.5 V to ±18 V 100 120 97 120 dB VS = ± 1.5 V to ±18 V, –40 °C ≤ T A ≤ +125°C 9794dB Supply Current/Amplifier ISY –40 °C ≤ T A ≤ +125°C, R L = ∞ VOUT = 0 V, VS = ±18 V 30 30 µA NOISE PERFORMANCE Voltage Noise Density en f = 1 kHz 65 65 nV/ √Hz Current Noise Density in f = 1 kHz 0.05 0.05 pA/ √Hz Voltage Noise en p-p 0.1 Hz to 10 Hz 3 3 µV p-p DYNAMIC PERFORMANCE Slew Rate SR RL = 2 k Ω 15 15 V/ms Gain Bandwidth Product GBP 35 35 kHz Channel Separation VOUT = 10 V p-p, RL = 2 k Ω, f = 1 kHz 120 120 dB NOTES 1Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125 °C, with an LTPD of 1.3. 2Offset voltage drift is the average of the –40 °C to +25°C delta and the +25°C to +125°C delta. Specifications subject to change without notice. |
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