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2SC3930W 数据表(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC3930W 数据表(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor 2SC3930W Document number: BL/SSSTF036 www.galaxycn.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=100μA,IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=10V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=10V,IC=1mA 70 220 Transition frequency fT VCE=10V, IE= 1mA f=200MHz 150 MHz Common emitter reverse transfer capacitance Cre VCE=10V, IE= 1mA f=10.7MHz 1.5 pF Noise figure NF VCB=10V,IC=1mA,f=5MHz 4 dB Reverse transfer impedance Zrb VCB=10V,IC=1mA,f=2MHz 50 Ω CLASSIFICANTION OF hFE Marking VB VC hFE 70-140 110-220 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
类似零件编号 - 2SC3930W |
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类似说明 - 2SC3930W |
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