KMB3D5N40SA datasheet(2/5 Pages) KEC

部件名	KMB3D5N40SA

功能描述	N-Ch Trench MOSFET

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制造商	KEC [KEC(Korea Electronics)]

网页	http://www.keccorp.com

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2 / 5 page

2008. 2. 19

2/5

KMB3D5N40SA

Revision No : 0

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

BVDSS

IDS=250 A, VGS=0V,

40

-

V

Drain Cut-off Current

IDSS

VGS=0V, VDS=32V

-

0.5

A

VGS=0V, VDS=32V, Tj=55

-

10

Gate Leakage Current

IGSS

VGS= 20V, VDS=0V

-

100

nA

Gate Threshold Voltage

Vth

VDS=VGS, ID=250 A

1.0

-

3.0

V

Drain-Source ON Resistance

RDS(ON)*

VGS=10V, ID=3.5A

-

36

45

m

VGS=4.5V, ID=3.0A

-

56

62

On-State Drain Current

ID(ON)*

VGS=10V, VDS 4.5V

6

-

A

Forward Transconductance

gfs*

VDS=10V, ID=3.5A

-

10

-

S

Dynamic

Input Capaclitance

Ciss

VDS=20V, f=1MHz, VGS=0V

-

315

-

pF

Ouput Capacitance

Coss

-

69

-

Reverse Transfer Capacitance

Crss

-

39

-

Total Gate Charge

Qg*

VDS=20V, VGS=0V, ID=3.5A

-

6.4

10

nC

Gate-Source Charge

Qgs*

-

0.7

-

Gate-Drain Charge

Qgd*

-

2.1

-

Turn-On Delat Time

td(on)*

VDD=20V, VGS=10V

ID=1A, RG=6

-

5

10

ns

Turn-On Rise Time

tr*

-

12

20

Turn-On Deley Time

td(off)*

-

20

30

Turn-On Fall Time

tf*

-

15

25

Source-Drain Diode Ratings

Source-Drain Forward Voltage

VSDF*

VGS=0V, IS=1A

-

0.8

1.2

V

Note > *Pulse Test : Pulse width <300

, Duty cycle < 2%

类似零件编号 - KMB3D5N40SA

制造商	部件名	数据表	功能描述
KEC(Korea Electronics)	KMB3D5N40SA	825Kb / 5P	N-Ch Trench MOSFET

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