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STD20NF20 数据表(PDF) 4 Page - STMicroelectronics |
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STD20NF20 数据表(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical characteristics STD20NF20 - STF20NF20 - STP20NF20 4/16 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 200 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC = 125°C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 10 A 0.10 0.125 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Forward transconductance VDS = 25 V, ID= 10 A 13 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1 MHz, VGS = 0 940 197 30 pF pF pF td(on) tr td(off) tr Turn-on delay time Rise time Turn-off delay time Fall time VDD = 100 V, ID = 10 A, RG= 4.7 Ω VGS = 10 V (see Figure 14) 15 30 40 10 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 160V, ID = 20 A, VGS = 10V (see Figure 15) 28 5.6 14.5 39 nC nC nC |
类似零件编号 - STD20NF20 |
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类似说明 - STD20NF20 |
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