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BTB04-600S 数据表(PDF) 4 Page - STMicroelectronics |
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BTB04-600S 数据表(HTML) 4 Page - STMicroelectronics |
4 / 6 page BTA04 T/D/S/A BTB04 T/D/S/A 4/6 Fig. 3: Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). Fig. 4: RMS on-state current versus case temper- ature. 1E-3 1E-2 1E-1 1E+0 1E+1 1E +2 5E+2 0.01 0.1 1 Zth/Rth Zth(j-c) Zth(j-a) tp(s) Fig. 5: Relative variation of thermal impedance versus pulse duration. Fig. 6: Relative variation of gate trigger current and holding current versus junction temperature. Fig. 1: Maximum RMS power dissipation versus RMS on-state current (F = 50Hz).(Curves are cut off by (dI/dt)c limitation) Fig. 2: Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). |
类似零件编号 - BTB04-600S |
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类似说明 - BTB04-600S |
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