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BDW93C 数据表(PDF) 2 Page - STMicroelectronics |
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BDW93C 数据表(HTML) 2 Page - STMicroelectronics |
2 / 6 page THERMAL DATA Rthj-case Thermal Resistance Junction-case 1.56 oC/W ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) Symbo l Parameter Test Con ditions Min. Typ. Max. Unit ICBO Collector Cut-of f Current (IE =0) for BDW94B VCB =80 V for BDW93C/94C VCB = 100 V Tcase = 150 oC for BDW94B VCB =80 V for BDW93C/94C VCB = 100 V 100 100 5 5 µA µA mA mA ICEO Collector Cut-of f Current (IB =0) for BDW94B VCE =80 V for BDW93C/94C VCE = 100 V 1 1 mA mA IEBO Emitter Cut-of f Current (IC =0) VEB =5 V 2 mA VCEO(s us) ∗ Collector-Emitter Sustaining Volt age (IB =0) IC = 100 mA for BDW94B for BDW 93C/94C 80 100 V V VCE(sat) ∗ Collector-Emitter Sat uration Voltage IC =5 A I B =20 mA IC =10 A I B = 100 mA 2 3 V V VBE(sat) ∗ Base-Emitter Sat uration Voltage IC =5 A I B =20 mA IC =10 A I B = 100 mA 2. 5 4 V V hFE ∗ DC Current G ain IC =3 A VCE =3 V IC =5 A VCE =3 V IC =10 A VCE =3 V 1000 750 100 20K VF* Parallel-diode Forward Voltage IF =5 A IF =10 A 1.3 1.8 2 4 V V hfe SmallSignalCurrent Gain IC =1 A VCE =10 V f= 1 MHz 20 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. BDW93C/BDW94B/BDW94C 2/6 |
类似零件编号 - BDW93C |
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类似说明 - BDW93C |
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