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TLP115A 数据表(PDF) 2 Page - Toshiba Semiconductor |
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TLP115A 数据表(HTML) 2 Page - Toshiba Semiconductor |
2 / 8 page TLP115A 2007-10-01 2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current (Note 1) IF 20 mA Pulse forward current (Note 2) IFP 40 mA Peak transient forward current (Note 3) IFPT 1 A Reverse voltage VR 5 V Output current IO 25 mA Output voltage VO 7 V Supply voltage(1 minute maximum) VCC 7 V Output power dissipation Po 40 mW Operating temperature range Topr −40~85 °C Storage temperature range Tstg −55~125 °C Lead solder temperature(10 sec.) Tsol 260 °C Isolation voltage(AC, 1 min., RH≤ 60%, Note 4) BVS 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Derate 0.36mA / °C above 70°C. (Note 2) 50% duty cycle, 1ms pulse width. Derate 0.72mA / °C above 70°C. (Note 3) Pulse width ≤ 1μs, 300pps. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Input voltage, low level VFL −3 0 1.0 V Input current, high level IFH 6.3 8 20 mA Supply voltage VCC 4.5 5 5.5 V Fan out (TTL load, each channel) N ― ― 8 ― Operating temperature Topr 0 ― 70 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. |
类似零件编号 - TLP115A_07 |
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类似说明 - TLP115A_07 |
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