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TC75S59FE 数据表(PDF) 2 Page - Toshiba Semiconductor |
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TC75S59FE 数据表(HTML) 2 Page - Toshiba Semiconductor |
2 / 9 page TC75S59F/FU/FE 2007-11-01 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage VDD, VSS ±3.5 or 7 V Differential input voltage DVIN ±7 V Input voltage VIN VSS~VDD V Output current IO ±35 mA TC75S59F/FU 200 Power dissipation TC75S59FE PD 100 mW Operating temperature Topr −40~85 °C Storage temperature Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This device’s CMOS structure makes it prone to latch-up. To prevent latch-up, please take the following precautions: • Ensure that no I/O pin’s voltage level ever exceeds VDD or drops below VSS. In addition, check the power-on timing. • Do not subject the device to excessive noise. |
类似零件编号 - TC75S59FE |
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类似说明 - TC75S59FE |
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