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TC75S59AFE 数据表(PDF) 2 Page - Toshiba Semiconductor |
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TC75S59AFE 数据表(HTML) 2 Page - Toshiba Semiconductor |
2 / 8 page TC75S59AFE/AFC 2007-10-01 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply Voltage VDD, VSS ±3.5 or 7 V Differential Input Voltage DVIN ±7 V Input Voltage VIN VSS~VDD V Output Current IO ±35 mA Output Voltage VO VSS ~ VSS + 7 V TC75S59AFE 100 Power Dissipation PD TC75S59AFC 100 (Note 1) mW Operating Temperature Topr −40~85 °C Strage Temperature Tstg −55~125 °C Note: Due to the CMOS structure, this device may be susceptible to latch-up. To prevent latch-up, please take the following precautions; • Ensure that no I/O pin’s voltage level ever exceeds Vdd or drops below Vss. In addition, check the power-on timing. • Do not subject the device to excessive noise. (Note 1) : FR4 in board implementation ( 25.4mm × 25.4mm × 1.6t, Cu Pad: 0.4mm 2) |
类似零件编号 - TC75S59AFE |
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类似说明 - TC75S59AFE |
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