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2SA1357 数据表(PDF) 3 Page - Toshiba Semiconductor |
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2SA1357 数据表(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SA1357 2006-11-09 3 Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) hFE – IC Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) VCE (sat) – IC Safe Operating Area Collector-emitter voltage VCE (V) −0.03 300 Common emitter VCE = −2 V 10 30 50 100 1000 −0.1 −1 −10 −25 25 Tc = 100°C −3 −0.3 −0.01 500 Tc = 100°C Common emitter IC/IB = 40 −3 −0.05 −0.1 −0.3 −0.5 −1 −25 −0.03 25 −0.03 −0.1 −1 −10 −3 −0.3 −0.01 0 0 Common emitter Tc = 25°C −9 −1 −5 −6 −3 −4 −5 −7 −6 −30 −100 −50 −70 −150 −20 IB = −10 mA 0 −200 −2 −1 −2 −3 −4 −7 −8 Common emitter VCE = −2 V 0 −9 −1 −4 −5 −6 −0.6 −0.8 −1.2 Tc = 100°C 25 −1.4 −1.0 −0.2 −0.4 0 −2 −3 −7 −8 −25 −0.3 −1 −3 −10 −30 −0.1 −0.3 −1 −3 −5 *: Single nonrepetitive pulse Tc = 25°C **: Pulse width = 10 ms (max) Duty cycle = 30% (max) Curves must be derated linearly with increase in temperature. −0.5 −10 −20 IC max (pulsed)* IC max (continuous) DC operation Tc = 25°C 10 ms* 100 ms* VCEO max |
类似零件编号 - 2SA1357 |
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类似说明 - 2SA1357 |
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