数据搜索系统,热门电子元器件搜索 |
|
STP8NM50 数据表(PDF) 3 Page - STMicroelectronics |
|
STP8NM50 数据表(HTML) 3 Page - STMicroelectronics |
3 / 14 page STP8NM50 - STP8NM50FP Electrical ratings 3/14 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit TO-220 TO-220FP VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 8 8 (1) 1. Limited only by maximum temperature allowed A ID Drain current (continuous) at TC = 100°C 5 5 (1) A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 32 32 (1) A PTOT Total dissipation at TC = 25°C 100 25 W Derating factor 0.8 W/°C dv/dt(3) 3. ISD ≤8 A, di/dt ≤200 A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Peak diode recovery voltage slope 15 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) -- 2500 V Tj Tstg Operating junction temperature Storage temperature -65 to 150 °C Table 2. Thermal data Symbol Parameter TO-220 TO-220FP Unit Rthj-case Thermal resistance junction-case max 1.25 5 °C/W Rthj-amb Thermal resistance junction-amb max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 2.5 A EAS Single pulse avalanche energy (starting Tj=25°C, ID=IAR, VDD= 50V) 200 mJ |
类似零件编号 - STP8NM50_06 |
|
类似说明 - STP8NM50_06 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |