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2SK3398 数据表(PDF) 2 Page - Toshiba Semiconductor |
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2SK3398 数据表(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK3398 2006-11-06 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V Drain cut-OFF current IDSS VDS = 500 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 6 A ⎯ 0.4 0.52 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 6 A 4.0 9.0 ⎯ S Input capacitance Ciss ⎯ 2040 ⎯ Reverse transfer capacitance Crss ⎯ 200 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 630 ⎯ pF Rise time tr ⎯ 22 ⎯ Turn-ON time ton ⎯ 58 ⎯ Fall time tf ⎯ 36 ⎯ Switching time Turn-OFF time toff ⎯ 180 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 45 ⎯ Gate-source charge Qgs ⎯ 25 ⎯ Gate-drain (“miller”) charge Qgd VDD ∼− 400 V, VGS = 10 V, ID = 10 A ⎯ 20 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 12 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 48 A Forward voltage (diode) VDSF IDR = 12 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 1200 ⎯ ns Reverse recovery charge Qrr IDR = 12 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 16 ⎯ μC Marking Duty <= 1%, tw = 10 μs 0 V 10 V VGS RL = 33 Ω VDD ∼− 200 V ID = 6 A VOUT K3398 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
类似零件编号 - 2SK3398_06 |
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类似说明 - 2SK3398_06 |
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