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2SK3310 数据表(PDF) 5 Page - Toshiba Semiconductor

部件名 2SK3310
功能描述  Silicon N Channel MOS Type Switching Regulator Applications
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

2SK3310 数据表(HTML) 5 Page - Toshiba Semiconductor

  2SK3310_06 Datasheet HTML 1Page - Toshiba Semiconductor 2SK3310_06 Datasheet HTML 2Page - Toshiba Semiconductor 2SK3310_06 Datasheet HTML 3Page - Toshiba Semiconductor 2SK3310_06 Datasheet HTML 4Page - Toshiba Semiconductor 2SK3310_06 Datasheet HTML 5Page - Toshiba Semiconductor 2SK3310_06 Datasheet HTML 6Page - Toshiba Semiconductor  
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2SK3310
2006-11-06
5
rth – tw
−15 V
15 V
Test circuit
Wave form
IAR
BVDSS
VDD
VDS
RG = 25 Ω
VDD = 90 V, L = 3.7 mH
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
−
⋅
⋅
⋅
=
VDD
BVDSS
BVDSS
2
I
L
2
1
ΕAS
Channel temperature (initial) Tch (°C)
Pulse width tw (S)
Drain-source voltage VDS (V)
Safe operating area
EAS – Tch
0.01
1
0.1
1
10
100
10
100
1000
* Single nonrepetitive pulse
Tc
= 25°C
Curves must be derated
linearly with increase in
temperature.
ID max (pulse) *
ID max
(continuous)
DC operation
Tc
= 25°C
100
μs *
1 ms *
VDSS max
100
200
300
50
100
0
400
25
75
150
125
0.01
10
μ
0.1
1
10
100
μ
1 m
10 m
100 m
1
10
T
PDM
t
Duty
= t/T
Rth (ch-c) = 3.125°C/W
Duty
= 0.5
0.2
0.1
Single pulse
0.05
0.02
0.01
0.001
0.003
0.005
0.03
0.05
0.3
0.5
3
5


类似零件编号 - 2SK3310_06

制造商部件名数据表功能描述
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Toshiba Semiconductor		 2SK3310 TOSHIBA-2SK3310_09 Datasheet
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类似说明 - 2SK3310_06

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