2SK2037 datasheet(2/5 Pages) TOSHIBA

部件名	2SK2037

功能描述	FIELD EFFECT TRANSISTOR SILICON CHANNEL TYPE

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SK2037

2007-11-01

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = 10 V, VDS = 0

⎯

1

μA

Drain-source breakdown voltage

V (BR) DSS

ID = 100 μA, VGS = 0

20

⎯

V

Drain cut-off current

IDSS

VDS = 20 V, VGS = 0

⎯

1

μA

Gate threshold voltage

Vth

VDS = 3 V, ID = 0.1 mA

0.5

⎯

1.5

V

Forward transfer admittance

⎪Yfs⎪

VDS = 3 V, ID = 10 mA

35

62

⎯

mS

Drain-source ON resistance

RDS (ON)

ID = 10 mA, VGS = 2.5 V

⎯

3.5

6

Ω

Input capacitance

Ciss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

14

⎯

pF

Reverse transfer capacitance

Crss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

5.3

⎯

pF

Output capacitance

Coss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

16

⎯

pF

Turn-on time

ton

VDD = 3 V, ID = 10 mA

VGS = 0~2.5 V

⎯

0.28

⎯

Switching time

Turn-off time

toff

VDD = 3 V, ID = 10 mA

VGS = 0~2.5 V

⎯

0.34

⎯

μs

Switching Time Test Circuit

类似零件编号 - 2SK2037

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	2SK2037	192Kb / 3P	TOSHIBA FIELD EFFECT TRANSISTOR SILICON CHANNEL TYPE

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