2SK1771

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type

2SK1771

FM Tuner, VHF RF Amplifier Applications

• Superior inter modulation performance.

• Low noise figure: NF = 1.0dB (typ.)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

12.5

V

Gate-source voltage

±8

V

Drain current

30

mA

Drain power dissipation

150

mW

Channel temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

⎯

⎯

±50

nA

Drain-source voltage

12.5

⎯

⎯

V

Drain current

0

⎯

0.1

mA

Gate-source cut-off voltage

0.5

1.0

1.5

V

Forward transfer admittance

⎯

15

20

mS

Input capacitance

2.9

3.5

4.1

pF

Reverse transfer capacitance

⎯

0.3

0.8

pF

Power gain

18

23

28

dB

Noise figure

NF

⎯

1.0

2.2

dB

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3J1D

Weight: 0.013 g (typ.)