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2SD1220 数据表(PDF) 2 Page - Toshiba Semiconductor |
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2SD1220 数据表(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SD1220 2006-11-21 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 150 V, IE = 0 ― ― 1.0 μA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 1.0 μA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 150 ― ― V DC current gain hFE (Note) VCE = 5 V, IC = 200 mA 60 ― 320 Collector-emitter saturation voltage VCE (sat) IC = 500 mA, IB = 50 mA ― ― 1.5 V Base-emitter voltage VBE VCE = 5 V, IC = 5 mA 0.5 ― 0.8 V Transition frequency fT VCE = 5 V, IC = 200 mA 20 100 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 13 20 pF Note: hFE classification R: 60 to 120, O: 100 to 200, Y: 160 to 320 Marking D1220 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator Part No. (or abbreviation code) |
类似零件编号 - 2SD1220 |
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类似说明 - 2SD1220 |
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