2SC2230A datasheet(4/5 Pages) TOSHIBA

部件名	2SC2230A

功能描述	Silicon NPN Triple Diffused Type (PCT Process)

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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4 / 5 page

2SC2230,2SC2230A

2006-11-09

4

Collector-base voltage VCB (V)

Collector current IC (mA)

Collector-emitter voltage VCE (V)

Safe Operating Area

30

1

0.5

5

3

1

IE = 0

f = 1 MHz

Ta = 25°C

10

30

100

10

50

3

300

10

0.5

50

30

1

Common emitter

Ta = 25°C

10

30

100

500

3

VCE = 10

5

2

Cob – VCB

fT – IC

*: Single nonrepetitive pulse

Ta = 25°C

Curves must be derated linearly

with increase in temperature.

1

3

5

10

30

50

300

30

100

300

IC max (continuous)

IC max (pulsed)*

1 s*

C2230

100 ms*

10

VCEO max

500

100

3

DC operation

Ta = 25°C

C2230A

10 ms*

类似零件编号 - 2SC2230A

制造商	部件名	数据表	功能描述
Foshan Blue Rocket Elec...	2SC2230A	869Kb / 6P	Silicon NPN transistor in a TO-92LM Plastic Package
Jiangsu Changjiang Elec...	2SC2230A	4Mb / 3P	TO-92L Plastic-Encapsulate Transistors
SHENZHEN KOO CHIN ELECT...	2SC2230A	286Kb / 3P	TRANSISTOR (NPN)

More results

类似说明 - 2SC2230A

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	2SC2068	70Kb / 2P	SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS)
	2SD1052A	113Kb / 3P	SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
	2SC1569	244Kb / 2P	SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS)
	2SB1018A	170Kb / 5P	Silicon NPN Triple Diffused Type (PCT Process)
	2SC2231	122Kb / 3P	SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS)
	2SC2229	124Kb / 5P	Silicon NPN Triple Diffused Type (PCT Process)
	2SC3425	177Kb / 6P	Silicon NPN Triple Diffused Type (PCT Process)
	2SC2242	112Kb / 3P	SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS)
	2SC1628	145Kb / 4P	SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS)
	2SC2552	163Kb / 2P	TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)