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2SJ346 数据表(PDF) 1 Page - Toshiba Semiconductor |
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2SJ346 数据表(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SJ346 2007-11-01 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ346 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V • High speed • Small package • Complementary to 2SK1829 Marking Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS −20 V Gate-source voltage VGSS −7 V DC drain current ID −50 mA Drain power dissipation PD 100 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gateate leakage current IGSS VGS = −7 V, VDS = 0 ⎯ ⎯ −1 μA Drain-source breakdown voltage V (BR) DSS ID = −100 μA, VGS = 0 −20 ⎯ ⎯ V Drain cut-off current IDSS VDS = −20 V, VGS = 0 ⎯ ⎯ −1 μA Gate threshould voltage Vth VDS = −3 V, ID = −0.1 mA −0.5 ⎯ −1.5 V Forward transfer admittance ⎪Yfs⎪ VDS = −3 V, ID = −10 mA 15 ⎯ ⎯ mS Drain-source ON resistance RDS (ON) ID = −10 mA, VGS = −2.5 V ⎯ 20 40 Ω Input capacitance Ciss VDS = −3 V, VGS = 0, f = 1 MHz ⎯ 10.4 ⎯ pF Reverse transfer capacitance Crss VDS = −3 V, VGS = 0, f = 1 MHz ⎯ 2.8 ⎯ pF Output capacitance Coss VDS = −3 V, VGS = 0, f = 1 MHz ⎯ 8.4 ⎯ pF Turn-on time ton VDD = −3 V, ID = −10 mA, VGS = 0~−2.5 V ⎯ 0.15 ⎯ Switching time Turn-off time toff VDD = −3 V, ID = −10 mA, VGS = 0~−2.5 V ⎯ 0.13 ⎯ μs Unit: mm JEDEC ― JEITA SC-70 TOSHIBA 2-2E1E Weight: 0.006 g (typ.) |
类似零件编号 - 2SJ346_07 |
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类似说明 - 2SJ346_07 |
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