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TPD4113AK 数据表(PDF) 8 Page - Toshiba Semiconductor

部件名 TPD4113AK
功能描述  High Voltage Monolithic Silicon Power IC
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

TPD4113AK 数据表(HTML) 8 Page - Toshiba Semiconductor

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TPD4113AK
2006-11-01
8
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
VBB
⎯
50
280
450
Operating power supply voltage
VCC
⎯
13.5
15
16.5
V
IBB
VBB = 450 V
⎯
⎯
0.5
ICC
VCC = 15 V
⎯
1.1
5
mA
IBS (ON)
VBS = 15 V, high side ON
⎯
260
410
Current dissipation
IBS (OFF)
VBS = 15 V, high side OFF
⎯
230
370
μA
VIH
VIN = “H”
3.5
⎯
⎯
Input voltage
VIL
VIN = “L”
⎯
⎯
1.5
V
IIH
VIN = 5Ｖ
⎯
⎯
150
Input current
IIL
VIN = 0 V
⎯
⎯
100
μA
VCEsatH
VCC = 15 V, IC = 0.5 A
⎯
2.4
3
Output saturation voltage
VCEsatL
VCC = 15 V, IC = 0.5 A
⎯
2.4
3
V
VFH
IF
= 0.5 A, high side
⎯
1.6
2.0
FRD forward voltage
VFL
IF
= 0.5 A, low side
⎯
1.6
2.0
V
Regulator voltage
VREG
VCC = 15 V, IO = 30 mA
6.5
7
7.5
V
BSD forward voltage
VF (BSD)
IF
= 500μＡ
⎯
0.9
1.2
V
Thermal shutdown temperature
TSD
VCC = 15 V
135
⎯
185
℃
Thermal shutdown hysteresis
ΔTSD
VCC = 15 V
⎯
50
⎯
℃
VCC under-voltage protection
VCCUVD
⎯
10
11
12
V
VCC under-voltage protection recovery
VCCUVR
⎯
10.5
11.5
12.5
V
VBS under-voltage protection
VBSUVD
⎯
8
9
9.5
V
VBS under-voltage protection recovery
VBSUVR
⎯
8.5
9.5
10.5
V
DIAG saturation voltage
VDIAGsat
IDIAG=5mA
⎯
⎯
0.5
V
Output-on delay time
ton
VBB = 280 V, IC = 0.5 A
⎯
1.5
3
μs
Output-off delay time
toff
VBB = 280 V, IC = 0.5 A
⎯
1.2
3
μs
Dead time
tdead
VBB = 280 V, IC = 0.5 A
1.4
⎯
⎯
μs
FRD reverse recovery time
trr
VBB = 280 V, IC = 0.5 A
⎯
200
⎯
ns


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