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TPD1008SA 数据表(PDF) 4 Page - Toshiba Semiconductor |
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TPD1008SA 数据表(HTML) 4 Page - Toshiba Semiconductor |
4 / 11 page TPD1008SA 2006-10-31 4 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source Voltage VDS 60 V DC VDD (1) 25 V Supply Voltage Pulse VDD (2) 60 (Rs = 1Ω, τ = 250ms) V DC VIN (1) −0.5~12 V Input Voltage Pulse VIN (2) VDD (1) + 1.5 (t = 100ms) V Diagnosis Output Voltage VDIAG −0.5~25 V Output Current IO Internally Limited A Input Current IIN ±10 mA Diagnosis Output Current IDIAG 5 mA Tc = 25°C PD (1) 30 W Power Dissipation Ta = 25°C PD (2) 2 W Operating Temperature Topr −40~110 °C Junction Temperature Tj 150 °C Storage Temperature Tstg −55~150 °C Lead Temperature/Time TSOL 275 (5s), 260 (10s) °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (TC = −40~110°C, VDD = 8~18V) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Operating Supply Voltage VDD (opr) ― ― 5 12 18 V Supply Current IDD ― VDD = 12V, VIN = 0V ― 1 5 mA VIH ― VDD = 12V, IO = 2A 3.5 ― ― V Input Voltage VIL ― VDD = 12V, IO = 1.2mA ― ― 1.5 V IIN (1) VDD = 12V, VIN = 5V ― 50 200 μA Input Current IIN (2) ― VDD = 12V, VIN = 0V −0.2 ― 0.2 μA On Voltage VDS (ON) ― VDD = 12V, IO = 2A, TC = 25°C ― ― 0.4 V On Resistance RDS (ON) ― VDD = 12V, IO = 2A, TC = 25°C ― ― 0.2 Ω Output Leakage Current IOL ― VDD = 18V, VIN = 0V ― ― 1.2 mA Diagnosis Output Voltage “L” Level VDL ― VDD = 12V, IDL = 2mA ― ― 0.4 V Diagnosis Output Current “H” Level IDH ― VDD = 18V, VDH = 18V ― ― 10 μA IS (1) (Note 1) 1 4 6 8 A Overcurrent Protection IS (2) (Note 2) 2 VDD = 12V, TC = 25°C 4 8 12 A Temperature TS ― 150 160 200 °C Thermal Shutdown Hysteresis ΔTS ― ― ― 10 ― °C Open Detection Resistance Rops ― VDD = 8V 1 20 100 kΩ tON 10 100 ― μs Switching Time tOFF 3 VDD = 12V, RL = 5Ω TC = 25°C 10 30 ― μs Note 1: Overcurrent detection value when load is short-circuited and VIN = “L” → “H” Note 2: Overcurrent detection value when load current is increased while VIN = “H” |
类似零件编号 - TPD1008SA_07 |
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类似说明 - TPD1008SA_07 |
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