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TPCS8104 数据表(PDF) 1 Page - Toshiba Semiconductor |
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TPCS8104 数据表(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPCS8104 2006-11-16 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8104 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.) • High forward transfer admittance: |Yfs| = 23 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID −11 Drain current Pulse (Note 1) IDP −44 A Drain power dissipation (t = 10 s) (Note 2a) PD 1.1 W Drain power dissipation (t = 10 s) (Note 2b) PD 0.6 W Single pulse avalanche energy (Note 3) EAS 31.5 mJ Avalanche current IAR −11 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.11 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3R1B Weight: 0.035 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 |
类似零件编号 - TPCS8104 |
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类似说明 - TPCS8104 |
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