MCZ33927R2 datasheet(10/44 Pages) FREESCALE

部件名	MCZ33927R2

功能描述	Three-Phase Field Effect Transistor Pre-Driver

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制造商	FREESCALE [Freescale Semiconductor, Inc]

网页	http://www.freescale.com

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Analog Integrated Circuit Device Data

10

Freescale Semiconductor

33927

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

OVERCURRENT COMPARATOR

Common Mode Input Range

VCM

2.0

–

VDD-0.02

V

Input Offset Voltage

VOS_OC

-50

–

50

mV

Overcurrent Comparator Threshold Hysteresis(19)

VOC_HYST

50

300

mV

Output Voltage

High-Level at IOH = -500µA

Low-Level at IOL = 500µA

VOH

VOL

0.85 VDD

–

VDD

0.5

V

HOLD OFF CIRCUIT

VDD Threshold (VDD Falling)

RST pin High

VDD_TH

1.5

–

4.0

V

Hold Off Current (At Each GATE Pin)

3.0V < VBAT < 40V

(20)

IHOLD

10

–

300

µA

PHASE COMPARATOR

High-Level Input Voltage Threshold

VIH_TH

0.5 VBAT

–

0.65 VBAT

V

Low-Level Input Voltage Threshold

VIL_TH

0.3 VBAT

–

0.45 VBAT

V

High-Level Output Voltage at IOH = -500µA

VOH

0.85 VDD

–

VDD

V

Low-Level Output Voltage at IOL = 500µA

VOL

–

0.5

V

High-Side Source Input Resistance(19), (23)

RIN

–

50

–

k

Ω

DESATURATION DETECTOR

Desaturation Detector Threshold(21)

VDES_TH

1.2

1.4

1.6

V

CURRENT SENSE AMPLIFIER

Recommended External Series Resistor (See Figure 9)

RS

–

1.0

–

k

Ω

Recommended External Feedback Resistor (See Figure 9)

Limited by the Output Voltage Dynamic Range

RFB

5.0

–

15

k

Ω

Maximum Input Differential Voltage (See Figure 9)

VID = VAMP_P - VAMP_N

VID

-800

–

+800

mV

Input Common Mode Range(19), (22)

VCΜ

0

–

3.0

V

Input Offset Voltage

RS = 1kΩ, VCM = 0.0V

VOS

-15

–

+15

mV

Input Offset Voltage Drift(19)

δV

OS/δT

–

-10

–

µV/°C

Input Bias Current

VCM = 2.0V

Ib

-200

–

+200

nA

Notes

19.

This parameter is a design characteristic, not production tested.

20.

The hold off circuit is designed to operate over the full operating range of VBAT. The specification indicates the conditions used in

production test.

21.

Desaturation is measured as the voltage drop below VBAT, thus the threshold is compared to the drain-source voltage of the external

high-side FET. See Figure 5.

22.

As long as one input is within VCM the output is guaranteed to have the correct phase. Exceeding the common mode rails will not cause

a phase inversion on the output.

23.

Input resistance is impedance from high-side source and is referenced to ground. Approximate tolerance is

±20%.

Table 3. Static Electrical Characteristics (continued)

Characteristics noted under conditions 8.0V

≤ V

PWR =VBAT ≤ 40V, -40°C ≤ T

A ≤ 125°C, unless otherwise noted. Typical

values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

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