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74ALVC574BQ 数据表(PDF) 8 Page - NXP Semiconductors |
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74ALVC574BQ 数据表(HTML) 8 Page - NXP Semiconductors |
8 / 17 page 74ALVC574_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 8 November 2007 8 of 17 NXP Semiconductors 74ALVC574 Octal D-type flip-flop; positive edge-trigger; 3-state [1] Typical values are measured at Tamb =25 °C [2] tpd is the same as tPHL and tPLH. ten is the same as tPZH and tPZL. tdis is the same as tPHZ and tPLZ. [3] CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz CL = output load capacitance in pF VCC = supply voltage in Volts N = number of inputs switching Σ(C L × VCC 2 × f o) = sum of the outputs tsu set-up time Dn to CP; see Figure 9 VCC = 1.65 V to 1.95 V 0.8 −0.1 - ns VCC = 2.3 V to 2.7 V 0.8 0.1 - ns VCC = 2.7 V 0.8 0.3 - ns VCC = 3.0 V to 3.6 V 0.8 0.0 - ns th hold time Dn to CP; see Figure 9 VCC = 1.65 V to 1.95 V 0.8 −0.1 - ns VCC = 2.3 V to 2.7 V 0.8 0.1 - ns VCC = 2.7 V 0.8 0.4 - ns VCC = 3.0 V to 3.6 V 0.7 −0.1 - ns fmax maximum frequency see Figure 7 VCC = 2.3 V to 2.7 V 100 200 - MHz VCC = 2.7 V 100 200 - MHz VCC = 3.0 V to 3.6 V 150 300 - MHz CPD power dissipation capacitance per flip-flop; VI = GND to VCC;VCC = 3.3 V [3] outputs HIGH or LOW state - 21 - pF outputs 3-state - 13 - pF Table 7. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 10. Symbol Parameter Conditions −40 °C to +85 °C Unit Min Typ[1] Max |
类似零件编号 - 74ALVC574BQ |
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类似说明 - 74ALVC574BQ |
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