BF1214 datasheet(2/18 Pages) NXP

部件名	BF1214

功能描述	Dual N-channel dual gate MOSFET

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制造商	NXP [NXP Semiconductors]

网页	http://www.nxp.com

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2 / 18 page

BF1214_1

Product data sheet

Rev. 01 — 30 October 2007

2 of 18

NXP Semiconductors

BF1214

Dual N-channel dual gate MOSFET

1.4 Quick reference data

[1]

Tsp is the temperature at the soldering point of the source lead.

[2]

Calculated from S-parameters.

[3]

Measured in Figure 24 test circuit.

2.

Pinning information

3.

Ordering information

Table 1.

Quick reference data for ampliﬁer A and B

Symbol Parameter

Conditions

Min

Typ

Max Unit

VDS

drain-source voltage

DC

-

6

V

ID

drain current

DC

-

30

mA

Ptot

total power dissipation

Tsp ≤ 107 °C

[1] -

-

180

mW

|yfs|

forward transfer admittance

f = 100 MHz; Tj =25 °C;

ID =18mA

27

32

37

mS

Ciss(G1)

input capacitance at gate1

f = 100 MHz

[2] -

2.2

2.7

pF

Crss

reverse transfer capacitance f = 100 MHz

[2] -20

-

fF

NF

noise ﬁgure

f = 400 MHz; YS =YS(opt)

-

0.9

1.5

dB

f = 800 MHz; YS =YS(opt)

-

1.2

1.8

dB

Xmod

cross modulation

input level for k = 1 % at

40 dB AGC; fw = 50 MHz;

funw =60MHz

[3]

102

105

-

dB

µV

Tj

junction temperature

-

150

°C

Table 2.

Discrete pinning

Description

Simpliﬁed outline

Symbol

1

drain (AMP A)

2

source

3

drain (AMP B)

4

gate1 (AMP B)

5

gate2

6

gate1 (AMP A)

13

2

4

5

6

sym119

AMP A

DA

S

DB

G1A

G2

G1B

AMP B

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BF1214

-

plastic surface-mounted package; 6 leads

SOT363

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