SI4804BDY datasheet(4/5 Pages) VISHAY

部件名	SI4804BDY

功能描述	Dual N-Channel 30-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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4 / 5 page

Si4804BDY

Vishay Siliconix

www.vishay.com

4

Document Number: 72061

S-32621—Rev. D, 29-Dec-03

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0

2468

10

TJ = 150_C

ID = 7.5 A

20

10

0.1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD − Source-to-Drain Voltage (V)

VGS − Gate-to-Source Voltage (V)

−0.8

−0.6

−0.4

−0.2

−0.0

0.2

0.4

−50

−25

0

25

50

75

100

125

150

ID = 250 mA

Threshold Voltage

TJ − Temperature (_C)

Safe Operating Area, Junction-to-Foot

VDS − Drain-to-Source Voltage (V)

100

1

0.1

1

10

100

0.01

10

100 ms

0.1

TC = 25_C

Single Pulse

1 s

10 s

dc

1

TJ = 25_C

10 ms

1 ms

0

60

100

20

40

Single Pulse Power, Junction-to-Ambient

Time (sec)

80

110

10−1

10−2

10−3

Limited by rDS(on)

类似零件编号 - SI4804BDY

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI4804BDY	32Kb / 1P	Dual N-Channel, 30-V (D-S) MOSFET Specification Comparison 22-Mar-04
	SI4804BDY	113Kb / 6P	Dual N-Channel 30 V (D-S) MOSFET 01-Jan-2022
	SI4804BDY-T1-E3	254Kb / 9P	Dual N-Channel 30 V (D-S) MOSFET Rev. G, 22-Feb-10
VBsemi Electronics Co.,...	SI4804BDY-T1-E3	1Mb / 9P	Dual N-Channel 30 V (D-S) MOSFET
Vishay Siliconix	SI4804BDY	113Kb / 6P	Dual N-Channel 30 V (D-S) MOSFET 01-Jan-2022

More results

类似说明 - SI4804BDY

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