NPN SILICON PLANAR EPITAXIAL TRANSISTOR

BF422

(BPL)

TO-92

BCE

Designed for High Voltage Video Amplifier in Television Receivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )

DESCRIPTION

SYMBOL

VALUE

UNITS

Collector -Base Voltage

VCBO

250

V

Collector -Emitter Voltage

VCEO

250

V

Emitter -Base Voltage

VEBO

5.0

V

Collector Current Continuous

IC

500

mA

Power Dissipation@ Ta=25 deg C

PD

900

mW

Derate Above 25 deg C

7.2

mW/deg C

Power Dissipation@ Tc=25 deg C

PD

2.75

W

Derate Above 25 deg C

22

mW/deg C

Operating & Storage Junction

Tj, Tstg

-55 to +150

deg C

Temperature Range

THERMAL RESISTANCE

From Junction to Case

Rth(j-c)

45

deg C/W

From Junction to Ambient

Rth(j-a)

156

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

UNITS

min

max

Collector -Emitter Voltage

VCEO

IC=1.0mA,IB=0

250

-

V

Collector -Base Voltage

VCBO

IC=100uA.IE=0

250

-

V

Emitter-Base Voltage

VEBO

IE=100uA, IC=0

5.0

-

V

Collector-Cut off Current

ICBO

VCB=200V, IE=0

-

10

nA

Emitter-Cut off Current

IEBO

VEB=5.0V,IC=0

100

nA

Base Emitter (Sat) Voltage

VBE(Sat)* IC=20mA,IB=2mA

-

2

V

Collector Emitter (Sat) Voltage

VCE(Sat) * IC=20mA, IB=2mA

-

0.5

V

DC Current Gain

hFE*

IC=25mA, VCE=20V

60

120

DYNAMIC CHARACTERISTICS

Transistors Frequency

ft

IC=10mA,VCE=10V

60

-

MHz

f=50MHz

Feedback Capacitance

Cre

VCB=30V, f=1MHz

-

1.6

pF

*Pulse Test : Pulse Width =300us, Duty Cycle=2%

VALUE

Transys

Electronics

LI M ITE D