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STB25NM60N 数据表(PDF) 5 Page - STMicroelectronics

部件名 STB25NM60N
功能描述  N-channel 600V - 0.140廓 - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh??Power MOSFET
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB25NM60N 数据表(HTML) 5 Page - STMicroelectronics

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STB25NM60N/-1 - STF25NM60N - STP25NM60N - STW25NM60N
Electrical characteristics
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Table 6.
Switching times
Symbol
Parameter
Test condictions
Min.
Typ.
Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD =300V, ID = 10A
RG =4.7Ω VGS = 10V
(see Figure 17)
24.5
18
94
24
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test condictions
Min
Typ.
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
20
80
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage
ISD = 20A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20A, di/dt = 100A/µs
VDD = 100V, Tj = 25°C
(see Figure 22)
427
7.2
33.6
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see Figure 22)
526
9.1
34.5
ns
µC
A


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