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IRFB3207PBF 数据表(PDF) 3 Page - International Rectifier

部件名 IRFB3207PBF
功能描述  HEXFET짰Power MOSFET
Download  12 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRFB3207PBF 数据表(HTML) 3 Page - International Rectifier

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IRF/B/S/SL3207PbF
www.irf.com
3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
≤ 60µs PULSE WIDTH
Tj = 25°C
4.5V
VGS
TOP
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM
4.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
≤ 60µs PULSE WIDTH
Tj = 175°C
4.5V
VGS
TOP
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM
4.5V
4.0
5.0
6.0
7.0
8.0
9.0
VGS, Gate-to-Source Voltage (V)
1.0
10.0
100.0
1000.0
VDS = 50V
≤ 60µs PULSE WIDTH
TJ = 25°C
TJ = 175°C
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
ID = 75A
VGS = 10V
1
10
100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
40
80
120
160
200
240
280
QG Total Gate Charge (nC)
0
4
8
12
16
20
VDS= 60V
VDS= 38V
ID= 75A


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