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STP6NK60ZFP 数据表(PDF) 4 Page - STMicroelectronics |
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STP6NK60ZFP 数据表(HTML) 4 Page - STMicroelectronics |
4 / 17 page Electrical characteristics STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z 4/17 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 600 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC = 125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100µA 33.75 4.5 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 3 A 11.2 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS = 8 V, ID =3 A 5S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1 MassiveGS = 0 905 115 25 pF pF pF Coss eq (2) . 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS = 0V, VDS = 0V to 480V 56 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480V, ID = 6 A, VGS = 10V (see Figure 17) 33 6 17 46 nC nC nC |
类似零件编号 - STP6NK60ZFP |
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类似说明 - STP6NK60ZFP |
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