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STPS8H100D 数据表(PDF) 4 Page - STMicroelectronics |
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STPS8H100D 数据表(HTML) 4 Page - STMicroelectronics |
4 / 9 page Characteristics STPS8H100 4/9 Figure 9. Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAC) Figure 10. Reverse leakage current versus reverse voltage applied (typical values) 1E-3 1E-2 1E-1 1E+0 1E+1 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) Zth(j-c)/Rth(j-c) δ = 0.1 δ = 0.2 δ = 0.5 Single pulse T δ=tp/T =tp/T tp tp 0 102030405060708090 100 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 5E+3 VR(V) IR(µA) Tj=125°C Tj=25°C Figure 11. Junction capacitance versus reverse voltage applied (typical values) Figure 12. Forward voltage drop versus forward current (maximum values) Figure 13. Thermal resistance junction to ambient versus copper surface under tab - Epoxy printed circuit board FR4, ecu = 35 µm (D 2PAK) 1 10 100 100 200 500 1000 VR(V) C(pF) F=1MHz Tj=25°C 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.1 1.0 10.0 50.0 VFM(V) IFM(A) Tj=25°C Tj=125°C 0 4 8 12 16 20 24 28 32 36 40 0 10 20 30 40 50 60 70 80 S(Cu) (cm²) Rth(j-a) (°C/W) |
类似零件编号 - STPS8H100D |
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类似说明 - STPS8H100D |
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