CD411299 datasheet(3/4 Pages) POWEREX

部件名	CD411299

功能描述	POW-R-BLOK Dual & Single Diode Isolated Module 100 Amperes / Up to 1600 Volts

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制造商	POWEREX [Powerex Power Semiconductors]

网页	http://www.pwrx.com

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Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (724) 925-7272

POW-R-BLOK

TM

Dual & Single Diode Isolated Module

100 Amperes / Up to 1600 Volts

Revision Date: 01/26/2002

CD41__99A, CS41__99A

CN41__99A, CC41__99A

Electrical Characteristics, TJ=25°C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Max.

Units

Repetitive Peak Reverse Leakage Current

IRRM

Up to 1600V, TJ=150°C

10

mA

Peak On-State Voltage

VFM

TJ=25°C, IFM=315A, 180° Conduction

1.45

V

Threshold Voltage, Low-level

Slope Resistance, Low-level

V(FO)1

rT1

TJ = 150°C, I = 16.7% x

πIF(AV) to πIF(AV)

0.79

1.78

V

mΩ

Threshold Voltage, High-level

Slope Resistance, High-level

V(FO)2

rT2

TJ = 150°C, I =

πIF(AV) to IFSM

0.87

1.57

V

mΩ

VTM Coefficients, Full Range

TJ = 150°C, I = 15%IF(AV) to IFSM

VTM = A+ B Ln I +C I + D Sqrt I

A =

B =

C =

D =

7.72E-01

1.22E-02

1.57E-03

-2.76E-05

Thermal Characteristics

Characteristics

Symbol

Max.

Units

Thermal Resistance, Junction to Case

RΘJ-C

Per Module, both conducting

Per Junction, both conducting

0.175

0.35

°C/W

Thermal Impedance Coefficients

ZΘJ-C

ZΘJ-C= K1 (1-exp(-t/

τ1))

+ K2 (1-exp(-t/

τ2))

+ K3 (1-exp(-t/

τ3))

+ K4 (1-exp(-t/

τ4))

K1 = 9.82 E+1

K2 = -1.11 E+2

K3 = 1.32 E+1

K4 = 2.72 E-1

τ1 = 4.60 E-3

τ2 = 4.65 E-3

τ3 = 5.05 E-3

τ4 = 0.1398

Thermal Resistance, Case to Sink Lubricated

RΘC-S

Per Module

0.1

°C/W

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CD411299 数据表(PDF) 3 Page - Powerex Power Semiconductors

CD411299 数据表(HTML) 3 Page - Powerex Power Semiconductors

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CD411299 数据表(PDF) 3 Page - Powerex Power Semiconductors

CD411299 数据表(HTML) 3 Page - Powerex Power Semiconductors

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类似说明 - CD411299

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