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BCW61B 数据表(PDF) 1 Page - Diotec Semiconductor

部件名 BCW61B
功能描述  Surface Mount General Purpose Si-Epi-Planar Transistors
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制造商  DIOTEC [Diotec Semiconductor]
网页  http://www.diotec.com
标志 DIOTEC - Diotec Semiconductor

BCW61B 数据表(HTML) 1 Page - Diotec Semiconductor

  BCW61B Datasheet HTML 1Page - Diotec Semiconductor BCW61B Datasheet HTML 2Page - Diotec Semiconductor  
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BCW61A ... BCW61D
BCW61A ... BCW61D
PNP
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
PNP
Version 2006-07-31
Dimensions - Maße [mm]
1 = B
2 = E
3 = C
Power dissipation – Verlustleistung
250 mW
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BCW60A ... BCW60D
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
- VCEO
32 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
- VCBO
32 V
Collector-Base-voltage – Kollektor-Basis-Spannung
C open
- VEB0
5 V
Power dissipation – Verlustleistung
Ptot
250 mW 1)
Collector current – Kollektorstrom (dc)
- IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
- ICM
200 mA
Peak Base current – Basis-Spitzenstrom
- IBM
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- VCE = 5 V, - IC = 10 µA
BCW61A
BCW61B
BCW61C
BCW61D
hFE
hFE
hFE
hFE
20
30
40
100
140
200
300
460
- VCE = 5 V, - IC = 2 mA
BCW61A
BCW61B
BCW61C
BCW61D
hFE
hFE
hFE
hFE
120
180
250
380
170
250
350
500
220
310
460
630
- VCE = 1 V, - IC = 50 mA
BCW61A
BCW61B
BCW61C
BCW61D
hFE
hFE
hFE
hFE
60
80
100
110
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
1.1
0.4
2.9 ±0.1
1
2
3
Type
Code
1.9


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