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BCX38B 数据表(PDF) 1 Page - Diotec Semiconductor |
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BCX38B 数据表(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page BCX38B BCX38B NPN Si-Epitaxial Planar Darlington-Transistors Si-Epitaxial Planar Darlington-Transistoren NPN Version 2006-07-24 Dimensions - Maße [mm] Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BCX38B Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 60 V Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 80 V Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 10 V Power dissipation – Verlustleistung Ptot 625 mW 1) Collector current – Kollektorstrom (dc) IC 800 mA Peak Collector current – Kollektor-Spitzenstrom ICM 2 A Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 2) IC = 100 mA, VCE = 5 V IC = 500 mA, VCE = 5 V hFE hFE 2000 4000 – – – – Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) IC = 800 mA, IB = 8 mA VCEsat –– 1.25 V Base-Emitter voltage – Basis-Emitter-Spannung 2) IC = 800 mA, VCE = 5 V VBE – – 1.8 V Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 60 V, (E open) ICBO – – 100 nA Emitter-Base cutoff current – Emitter-Basis-Reststrom VEB = 8 V, (C open) IEB0 – – 100 nA 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 2 x 2.54 E BC |
类似零件编号 - BCX38B |
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类似说明 - BCX38B |
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