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BAW56 数据表(PDF) 2 Page - Diotec Semiconductor |
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BAW56 数据表(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page BAW56 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Max. junction capacitance – Max. Sperrschichtkapazität VR = 0 V, f = 1 MHz CT 1.5 pF Reverse recovery time – Sperrverzug IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA trr < 6 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 400 K/W 1) Pinning – Anschlussbelegung Marking – Stempelung Double diode, common anode Doppeldiode, gemeinsame Anode 1 = C1 2 = C2 3 = A1/A2 BAW56 = A1 or/oder JD Other available configurations – Andere lieferbare Konfigurationen Single diode – einzelne Diode BAL99 Double diode, series connection – Doppeldiode, Reihenschaltung BAV99 Double diode, common cathode – Doppeldiode, gemeinsame Kathode BAV70 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG Forward characteristics (typical values) Durchlasskennlinien (typische Werte) V F [V] 1.4 1.0 0.8 0.6 0.4 0 [A] I F 10-4 10-3 10-2 10 -1 1 T = 25°C j T = 125°C j [%] P tot 120 100 80 60 40 20 0 [°C] T A 150 100 50 0 Power dissipation versus ambient temperature ) Verlustleistung in Abh. von d. Umgebungstemp. ) 1 1 2 1 3 |
类似零件编号 - BAW56_07 |
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类似说明 - BAW56_07 |
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