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FM25L256-S 数据表(PDF) 1 Page - Ramtron International Corporation |
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FM25L256-S 数据表(HTML) 1 Page - Ramtron International Corporation |
1 / 14 page N O T RE C O M ME N D ED FO R N EW DE SI G N S Al te rn at iv e: FM 25 L2 56 B Pre-Production This is a product in the pre-production phase of development. Device Ramtron International Corporation characterization is complete and Ramtron does not expect to change the 1850 Ramtron Drive, Colorado Springs, CO 80921 specifications. Ramtron will issue a Product Change Notice if any (800) 545-FRAM, (719) 481-7000 specification changes are made. www.ramtron.com Rev. 2.3 March 2007 Page 1 of 14 FM25L256 256Kb FRAM Serial 3V Memory – Extended Temp. Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI • Up to 20 MHz Frequency • Direct Hardware Replacement for EEPROM • SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Write Protection Scheme • Hardware Protection • Software Protection Low Power Consumption • Low Voltage Operation 3.0V – 3.6V • 1 µA (typ) Standby Current Industry Standard Configurations • Extended Temperature -25 °C to +85°C • 8-pin SOIC and 8-pin TDFN Packages • “Green” Packaging Options Description The FM25L256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike serial EEPROMs, the FM25L256 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte has been transferred to the device. The next bus cycle may commence without the need for data polling. In addition, the product offers virtually unlimited write endurance. FRAM also exhibits much lower power consumption than EEPROM. These capabilities make the FM25L256 ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The FM25L256 provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement. The FM25L256 uses the high-speed SPI bus, which enhances the high-speed write capability of FRAM technology. Device specifications are guaranteed over an extended temperature range of -25°C to +85°C. Pin Configuration Ordering Information FM25L256-S 8-pin SOIC FM25L256-G “Green” 8-pin SOIC FM25L256-DG “Green” 8-pin TDFN /CS SO /WP VSS VDD /HOLD SCK SI 8 7 6 5 1 2 3 4 Top View Pin Name Function /CS Chip Select /WP Write Protect /HOLD Hold SCK Serial Clock SI Serial Data Input SO Serial Data Output VDD Supply Voltage (3.0 to 3.6V) VSS Ground CS SO WP VSS VDD HOLD SCK SI 1 2 3 4 8 7 6 5 |
类似零件编号 - FM25L256-S |
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类似说明 - FM25L256-S |
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