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IRF540 数据表(PDF) 1 Page - STMicroelectronics |
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IRF540 数据表(HTML) 1 Page - STMicroelectronics |
1 / 8 page 1/8 February 2003 NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 & IRF540 N-CHANNEL 100V - 0.055 Ω - 22A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET s TYPICAL RDS(on) = 0.055Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGE s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL TYPE VDSS RDS(on) ID IRF540 100 V <0.077 Ω 22 A 1 2 3 TO-220 Ordering Information ABSOLUTE MAXIMUM RATINGS ( •) Pulse width limited by safe operating area. 1) ISD ≤22A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 12A, VDD = 30V SALES TYPE MARKING PACKAGE PACKAGING IRF540 IRF540& TO-220 TUBE Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 100 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 22 A ID Drain Current (continuous) at TC = 100°C 15 A IDM(•) Drain Current (pulsed) 88 A Ptot Total Dissipation at TC = 25°C 85 W Derating Factor 0.57 W/°C dv/dt (1) Peak Diode Recovery voltage slope 9 V/ns EAS (2) Single Pulse Avalanche Energy 220 mJ Tstg Storage Temperature -55 to 175 °C Tj Max. Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM |
类似零件编号 - IRF540_03 |
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类似说明 - IRF540_03 |
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