TYN612MFPRG datasheet(2/8 Pages) STMICROELECTRONICS

部件名	TYN612MFPRG

功能描述	12 A SCR

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Characteristics

TYN612M

2/8

1

Characteristics

Table 2.

Electrical characteristics (Tj = 25° C, unless otherwise specified)

Symbol

Test Conditions

Value

Unit

IGT

VD = 12 V

RL = 140 Ω

MIN.

1.5

mA

MAX.

5

VGT

VD = 12 V

RL = 140 Ω

MIN.

0.5

V

TYP.

0.7

MAX.

1.3

VGD

VD = VDRM RL = 3.3 kΩ

Tj = 125° C

MIN.

0.2

V

IH

IT = 500 mA Gate open

MAX.

20

mA

IL

IG = 1.2 IGT

MAX.

40

mA

dV/dt

VD = 67 % VDRM Gate open

Tj =125° C

MIN.

50

V/µs

VTM

ITM = 24 A tp = 380 µs

Tj = 25° C

MAX.

1.6

V

Vt0

Threshold voltage

Tj = 125° C

MAX.

0.85

V

Rd

Dynamic resistance

Tj = 125° C

MAX.

30

m

Ω

IDRM

IRRM

VDRM = VRRM

Tj = 25° C

MAX.

5µA

Tj = 125° C

2

mA

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (DC)

TO-220AB

1.3

° C/W

TO-220FPAB

4.5

Rth(j-a)

Junction to ambient (DC)

TO-220AB

55

° C/W

TO-220FPAB

55

Figure 1.

Maximum average power

dissipation versus average

on-state current

Figure 2.

Average and D.C. on-state current

versus case temperature

(TO-220AB)

0

1

2

3

4

5

6

7

8

9

10

11

12

012

3456

78

9

P(W)

I

(A)

T(AV)

α = 180°

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

0

25

50

75

100

125

I

(A)

T(AV)

T (°C)

C

α = 180°

D.C.

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