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1N4753A 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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1N4753A 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 5 page - 818 - 1N4741A THRU 1M200Z Glass Passivated Junction Silicon Zener Diode Voltage Range 11 to 200 Volts 1.0 Watts Peak Power Features Low profile package Built-in strain relief Glass passivated junction Low inductance Typical IR less than 5.0 μA above 11V High temperature soldering guaranteed: 260 OC / 10 seconds at terminals Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Mechanical Data Case: Molded plastic DO-41 Epoxy: UL 94V-O rate flame retardant Lead: Axial leads, solderable per MIL-STD-202, Method 2025 Polarity: Color Band denotes cathode end Mounting position : Any Weight: 0.012 ounces, 0.3 gram DO-41 Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Type Number Symbol Value Units Peak Power Dissipation at TA=50 OC, Derate above 50 OC (Note 1) PD 1.0 6.67 Watts mW/ OC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) (Note 2) IFSM 10.0 Amps Operating and Storage Temperature Range TJ, TSTG -55 to + 150 OC Notes: 1. Mounted on 5.0mm 2 (0.013mm thick) land areas. 2. Measured on 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minute Maximum. |
类似零件编号 - 1N4753A |
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类似说明 - 1N4753A |
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