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SI6467DQ 数据表(PDF) 4 Page - Vishay Siliconix |
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SI6467DQ 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 4 page Si6467DQ Vishay Siliconix www.vishay.com 2-4 Document Number: 70829 S-59526—Rev. A, 19 Oct-98 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 0.5 - 50 - 25 0 25 50 75 100 125 150 ID = 250 mA 1.0 1.2 0.00 0.02 0.04 0.06 0.08 0.10 02468 1 10 30 ID = 8.0 A 0.01 0 1 30 60 10 20 10 30 0.1 0.00 0.2 0.4 0.6 0.8 TJ = 25_C TJ = 150_C Threshold Voltage TJ - Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Single Pulse Power VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Time (sec) 40 50 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 2 1 0.1 0.01 10-3 10-2 1 10 600 10-1 10-4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
类似零件编号 - SI6467DQ |
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类似说明 - SI6467DQ |
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