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BD239B 数据表(PDF) 2 Page - Power Innovations Ltd |
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BD239B 数据表(HTML) 2 Page - Power Innovations Ltd |
2 / 6 page BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS 2 JUNE 1973 - REVISED MARCH 1997 PRODUCT INFORMATION NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = 30 mA (see Note 5) IB = 0 BD239 BD239A BD239B BD239C 45 60 80 100 V ICES Collector-emitter cut-off current VCE = 55 V VCE = 70 V VCE = 90 V VCE = 115 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 BD239 BD239A BD239B BD239C 0.2 0.2 0.2 0.2 mA ICEO Collector cut-off current VCE = 30 V VCE = 60 V IB = 0 IB = 0 BD239/239A BD239B/239C 0.3 0.3 mA IEBO Emitter cut-off current VEB = 5 V IC = 0 1 µA hFE Forward current transfer ratio VCE = 4 V VCE = 4 V IC = 0.2 A IC = 1 A (see Notes 5 and 6) 40 15 VCE(sat) Collector-emitter saturation voltage IB = 0.2 A IC = 1 A (see Notes 5 and 6) 0.7 V VBE Base-emitter voltage VCE = 4 V IC = 1 A (see Notes 5 and 6) 1.3 V hfe Small signal forward current transfer ratio VCE = 10 V IC = 0.2 A f = 1 kHz 20 |h fe| Small signal forward current transfer ratio VCE = 10 V IC = 0.2 A f = 1 MHz 3 thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 4.17 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT ton Turn-on time IC = 200 mA VBE(off) = -3.4 V IB(on) = 20 mA RL = 150 Ω IB(off) = -20 mA tp = 20 µs, dc ≤ 2% 0.3 µs toff Turn-off time 0.8 µs |
类似零件编号 - BD239B |
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类似说明 - BD239B |
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