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AMB0480XXRH 数据表(PDF) 10 Page - Integrated Device Technology |
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AMB0480XXRH 数据表(HTML) 10 Page - Integrated Device Technology |
10 / 15 page 10 COMMERCIALTEMPERATURERANGE IDTAMB0480 ADVANCEDMEMORYBUFFERFORFULLYBUFFEREDDIMM PIN DESCRIPTION Signal Type Description Channel Interface PN[13:0] O Northbound Output Data: High speed serial signal. Read path from AMB toward host on primary side of the DIMM connector. PN[13:0] O Northbound Output Data Complement SN[13:0] I Northbound Input Data: High speed serial signal. Read path from the previous AMB toward this AMB on secondary side of the DIMM connector. SN[13:0] I Northbound Input Data Complement PS[9:0] I Southbound Input Data: High speed serial signal. Write path from host toward AMB on primary side of the DIMM connector. PS[9:0] I Southbound Input Data Complement SS[9:0] O Southbound Output Data: High speed serial signal. Write path from this AMB toward next AMB on secondary side of the DIMM connector. These output buffers are disabled for the last AMB on the channel. SS[9:0] O Southbound Output Data Complement FBDRES A External 100 ΩprecisionresistorconnectedtoVCC.On-dieterminationcalibratedagainstthisresistor. DRAM Interface CB[7:0] I/O Check bits DQ[63:0] I/O Data DQS[17:0] I/O Data Strobe: DDR2 data and check-bit strobe. DQS[17:0] I/O Data Strobe Complement: DDR2 data and check-bit strobe complements. A0A-A15A, O Address: Used for providing multiplexed row and column address to SDRAM. A0B-A15B BA0A-BA2A, O Bank Active: Used to select the bank within a rank. BA0B-BA2B RASA, RASB O Row Address Strobe: Used with CS, CAS, and WE to specify the SDRAM command. CASA, CASB O Column Address Strobe: Used with CS, RAS, and WE to specify the SDRAM command. WEA, WEB O Write Enable: Used with CS, CAS, and RAS to specify the SDRAM command. CS0A-CS1A, O Chip Select: Used with CAS, RAS, and WE to specify the SDRAM command. These signals are used for selecting one of two SDRAM ranks. CS0 is used to select the first rank and CS1 is used to select the second rank. CKE0A-CKE1A, O Clock Enable: DIMM command register enable. CKE0B-CKE1B ODT0A, ODT0B O DIMM On-Die-Termination: Dynamic ODT enables for each DIMM on the channel. CLK[3:0] O Clock: Clocks to DRAMs. CLK0 and CLK1 are always used. CLK2 and CLK3 are used when the AMB is configured for dual rank DIMMs. CLK[3:0] O Clock Complement: Clocks to DRAMs. DDR Compensation DDRC_C14 A DDR Compensation Common: Common return (ground) pin for DDRC_B18 and DDRC_C18 DDRC_B18 A DDR Compensation Ball Resistor (825 Ω)connectedtoCompensationCommonabove DDRC_C18 A DDR Compensation Ball Resistor (121 Ω)connectedtoCompensationCommonabove DDRC_B12 A DDR Compensation Ball Resistor (82 Ω)connectedto VSS DDRC_C12 A DDR Compensation Ball Resistor (82 Ω)connectedtoVDD CS0B-CS1B |
类似零件编号 - AMB0480XXRH |
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类似说明 - AMB0480XXRH |
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