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STGB6NC60HD-1 数据表(PDF) 3 Page - STMicroelectronics |
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STGB6NC60HD-1 数据表(HTML) 3 Page - STMicroelectronics |
3 / 18 page STGB6NC60HD/-1 - STGP6NC60HD - STGF6NC60HD Electrical ratings 3/18 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit D²PAK/I²PAK/ TO-220 TO-220FP VCES Collector-emitter voltage (VGS = 0) 600 V IC (1) 1. Calculated according to the iterative formula:: Collector current (continuous) at TC = 25°C 15 6 A IC (1) Collector current (continuous) at TC = 100°C 73 A ICM (2) 2. Pulse width limited by max junction temperature Collector current (pulsed) 21 A VGE Gate-emitter voltage ±20 V IF Diode RMS forward current at Tc=25°C 10 A PTOT Total dissipation at TC = 25°C 56 20 W VISO Insulation withstand voltage A.C.(t=1sec;Tc=25°C) -- 2500 Tstg Storage temperature – 55 to 150 °C Tj Operating junction temperature Tl Maximum lead temperature for soldering purpose (for 10sec. 1.6 mm from case) 300 °C Table 2. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max TO-220 D²PAK I²PAK 2°C/W TO-220FP 5°C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W I C T C () T JMAX T C – R THJ C – V CESAT MAX () T C I C , () × ------------------------------------------------------------------------------------------------------ = |
类似零件编号 - STGB6NC60HD-1 |
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类似说明 - STGB6NC60HD-1 |
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