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2SK2552C 数据表(PDF) 1 Page - NEC |
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2SK2552C 数据表(HTML) 1 Page - NEC |
1 / 5 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. JUNCTION FIELD EFFECT TRANSISTOR 2SK2552C N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DATA SHEET Document No. D18893EJ1V0DS00 (1st edition) Date Published August 2007 NS Printed in Japan 2007 DESCRIPTION The 2SK2552C contains a diode and high resistivity between its gates and sources, for achieving short stability time during power-on. In addition, because of its compact package and low noise, the 2SK2552C is especially suitable for compact ECMs for audio or mobile devices such as cell- phones. FEATURES • Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Containing a diode and high resistivity, short stability time is achieved during power-on. • Small package: SC-75 (USM) ORDERING INFORMATION PART NUMBER PACKAGE 2SK2552C SC-75 (USM) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = −1.0 V) VDSX 20 V Gate to Drain Voltage VGDO −20 V Drain Current ID 10 mA Gate Current IG 10 mA Total Power Dissipation PT 100 mW Junction Temperature Tj 125 °C Storage Temperature Tstg −55 to +125 °C Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document. PACKAGE DRAWING (Unit: mm) 0.6 TYP. 0 to 0.1 0.5 TYP. 0.5 TYP. 1.0 TYP. 1.6 ±0.1 0.75 ±0.05 0.3 +0.1 –0 0.15 +0.1 –0.05 0.2 +0.1 –0 1 2 3 EQUIVALENT CIRCUIT 3 2 1 1: Source 2: Drain 3: Gate |
类似零件编号 - 2SK2552C |
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类似说明 - 2SK2552C |
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