2SJ687 datasheet(6/8 Pages) NEC

部件名	2SJ687

功能描述	MOS FIELD EFFECT TRANSISTOR

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制造商	NEC [NEC]

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Data Sheet D18719EJ2V0DS

6

2SJ687

SINGLE AVALANCHE CURRENT vs.

INDUCTIVE LOAD

SINGLE AVALANCHE ENERGY

DERATING FACTOR

-1

-10

-100

0.01

0.1

1

10

Starting Tch = 25

°C

VDD =

−10 V

RG = 25

Ω

VGS =

−12 → 0 V

IAS =

−20 A

EAS = 40 mJ

L - Inductive Load - mH

0

20

40

60

80

100

120

25

50

75

100

125

150

VDD =

−10 V

RG = 25

Ω

VGS =

−12 → 0 V

IAS

≤ −20 A

Starting Tch - Starting Channel Temperature -

°C

类似零件编号 - 2SJ687

制造商	部件名	数据表	功能描述
Renesas Technology Corp	2SJ687	276Kb / 10P	MOS FIELD EFFECT TRANSISTOR 2007
VBsemi Electronics Co.,...	2SJ687-ZK-E1-AY	1Mb / 8P	P-Channel 30 V (D-S) MOSFET
Renesas Technology Corp	2SJ687-ZK-E1-AY	276Kb / 10P	MOS FIELD EFFECT TRANSISTOR 2007
	2SJ687-ZK-E2-AY	276Kb / 10P	MOS FIELD EFFECT TRANSISTOR 2007
	2SJ687	277Kb / 10P	SWITCHING P-CHANNEL POWER MOS FET

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