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TDA8350 数据表(PDF) 6 Page - NXP Semiconductors |
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TDA8350 数据表(HTML) 6 Page - NXP Semiconductors |
6 / 16 page January 1995 6 Philips Semiconductors Preliminary specification DC-coupled vertical deflection and East-West output circuit TDA8350Q CHARACTERISTICS VP = 17.5 V; VFB = 45 V; VO(sink) = 20 V; fi = 50 Hz; II(sb) = 400 µA; Tamb =25°C; measured in test circuit of Fig.3; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC supply VP operating supply voltage 9 − 25 V VFB flyback supply voltage Vp − 50 V note 1 −− 60 V IP supply current no signal; no load − 30 55 mA Vertical circuit VO output voltage swing (scan) Idiff = 0.6 mA (p-p); Vdiff = 1.8 V (p-p); IO = 3 A (p-p) 19.8 −− V LE linearity error IO = 3 A (p-p); − 12% IO = 50 mA (p-p); note 2 − 12% VO output voltage swing (flyback) VO(A) -VO(B) Idiff = 0.3 mA; IO = 1.5 A (M) − 39 − V VDF forward voltage of the internal efficiency diode (VO(A) -VFB) IO = −1.5 A (M); Idiff = 0.3 mA −− 1.5 V |Ios| output offset current Idiff =0; II(sb) =50to500 µA −− 30 mA |V os| offset voltage at the input of the feedback amplifier VI(fb) -VO(B) Idiff =0; II(sb) =50to500 µA −− 18 mV ∆VosT output offset voltage as a function of temperature Idiff =0; −− 72 µV/K VO(A) DC output voltage Idiff = 0; note 3 − 8 − V Gv open loop voltage gain (V9-5/V1-2) notes 4 and 5 − 80 − dB open loop voltage gain (V9-5/V3-5; V1-2 =0) note 4 − 80 − dB VR voltage ratio V1-2/V3-5 − 0 − dB fres frequency response ( −3 dB) note 6 − 40 − Hz GI current gain (IO/Idiff) − 5000 − ∆GIT current gain drift as a function of temperature −− 10−4 /K II(sb) signal bias current 50 400 500 µA IFB flyback supply current during scan −− 100 µA PSRR power supply ripple rejection note 7 − 80 − dB VI(DC) DC voltage at the input − 2.7 − V VI(CM) common mode input voltage II(sb) =0 0 − 1.6 V Ibias input bias current II(sb) =0 − 0.1 0.5 µA IO(CM) common mode output current ∆II(sb) = 300 µA (p-p); fi = 50 Hz; Idiff =0 − 0.2 − mA |
类似零件编号 - TDA8350 |
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类似说明 - TDA8350 |
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