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TDA1001BT 数据表(PDF) 7 Page - NXP Semiconductors |
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TDA1001BT 数据表(HTML) 7 Page - NXP Semiconductors |
7 / 13 page December 1982 7 Philips Semiconductors Product specification Interference and noise suppression circuit for FM receivers TDA1001B TDA1001BT APPLICATION INFORMATION VP = 12 V; Tamb = 25 °C; f = 1 kHz; measured in Fig.4; unless otherwise specified PARAMETER SYMBOL MIN. TYP. MAX. UNIT Supply voltage range (pin 9) VP 7,5 12 16 V Quiescent supply current (pin 9) IP 10 14 18 mA Signal path D.C. input voltage (pin 1) V1-16 − 4,5 − V Input impedance (pin 1); f = 40 kHz |Zi1|35 −− k Ω D.C. output voltage (pin 6) V6-16 2,4 2,8 − V Output resistance (pin 6) Ro6 low-ohmic Voltage gain (V6/V1)Gv6/1 0 0,5 1 dB −3 dB point of low-pass filter f(−3dB) − 70 − kHz Sensitivity for THD < 0,5% (peak-to-peak value) Vi(p-p) 1,2 1,8 − V Residual interference pulse after suppression (see Fig.3); pin 7 to ground; Vi(tr)M = 100mV; (peak-to-peak value) V6-16(p-p) −− 3mV Interference suppression at R13 = 0; notes 5 and 6; Vi(rms) = 30 mV; f = 19 kHz (sinewave); Vi(tr)M = 60 mV; fr = 400 Hz αint 20 30 − dB Interference processing Input signal at pin 1; output signal at pin 10 Suppression pulse threshold voltage; control function OFF (pin 9 connected to pin 12); r.m.s. value; note 1 measured with sinewave input signal f = 120 kHz; −V10-9 > 1 V at R13 = 0 Ω Vi(tr)rms 811 14 mV at R13 = 2,7 k Ω Vi(tr)rms 18 28,5 40 mV voltage difference for safe triggering/ non-triggering (r.m.s. value) ∆Vi(rms) − 1 − mV measured with interference pulses f = 400 Hz (see Fig.3); peak value at R13 = 0 Ω Vi(tr)M − 19 − mV at R13 = 2,7 k Ω Vi(tr)M − 45 − mV Suppression pulse duration (note 2) tS 24 27 30 µs |
类似零件编号 - TDA1001BT |
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类似说明 - TDA1001BT |
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