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SS15-T3 数据表(PDF) 1 Page - Won-Top Electronics |
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SS15-T3 数据表(HTML) 1 Page - Won-Top Electronics |
1 / 4 page SS12 – S100 1 of 4 © 2006 Won-Top Electronics Pb SS12 – S100 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Ideally Suited for Automatic Assembly B ! Low Power Loss, High Efficiency ! Surge Overload Rating to 30A Peak D ! For Use in Low Voltage Application A ! Guard Ring Die Construction F ! Plastic Case Material has UL Flammability Classification Rating 94V-O C H G E Mechanical Data ! Case: SMA/DO-214AC, Molded Plastic ! Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Weight: 0.064 grams (approx.) ! Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Characteristic Symbol SS12 SS13 SS14 SS15 SS16 SS18 SS19 S100 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 50 60 80 90 100 V RMS Reverse Voltage VR(RMS) 14 21 28 35 42 56 64 71 V Average Rectified Output Current @TL = 75°C IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward Voltage @IF = 1.0A VFM 0.50 0.70 0.85 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 0.5 20 mA Typical Thermal Resistance (Note 1) RJL RJA 28 88 °C/W Operating Temperature Range Tj -65 to +125 °C Storage Temperature Range TSTG -65 to +150 °C Note: 1. Mounted on P.C. Board with 5.0mm2 copper pad area. WTE POWER SEMICONDUCTORS SMA/DO-214AC Dim Min Max A 2.50 2.90 B 4.00 4.60 C 1.20 1.60 D 0.152 0.305 E 4.80 5.28 F 2.00 2.44 G 0.051 0.203 H 0.76 1.52 All Dimensions in mm |
类似零件编号 - SS15-T3 |
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类似说明 - SS15-T3 |
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