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SI3443DV 数据表(PDF) 1 Page - International Rectifier |
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SI3443DV 数据表(HTML) 1 Page - International Rectifier |
1 / 7 page Parameter Max. Units VDS Drain- Source Voltage -20 V ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.4 ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -3.5 A IDM Pulsed Drain Current -20 PD @TA = 25°C Power Dissipation 2.0 PD @TA = 70°C Power Dissipation 1.3 Linear Derating Factor 0.016 W/°C EAS Single Pulse Avalanche Energy 31 mJ VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C 01/13/03 Parameter Max. Units RθJA Maximum Junction-to-Ambient 62.5 °C/W Thermal Resistance Absolute Maximum Ratings W www.irf.com 1 Si3443DV HEXFET® Power MOSFET These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. VDSS = -20V RDS(on) = 0.065Ω Description l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l -2.5V Rated Top View 1 2 D G A D D D S 3 4 5 6 TSOP-6 PD- 93795B |
类似零件编号 - SI3443DV |
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类似说明 - SI3443DV |
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